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Memoria SODIMM DDR4 Kingston 4Gb 2666 MHz (0647)

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Memoria SODIMM DDR4 Kingston 4Gb 2666 MHz (0647)

412345
sodimm
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Envio Rapido a Ciudad de Buenos Aires -

CL(IDD) 19 cycles

Row Cycle Time (tRCmin) 45.75ns(min.)

Refresh to Active/Refresh 350ns(min.)

Command Time (tRFCmin) / Row Active Time (tRASmin) 32ns(min.)

Maximum Operating Power TBD W*

UL Rating 94 V - 0

Operating Temperature 0 to +85

Storage Temperature -55 to +100 C
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Power Supply: VDD = 1.2V Typical

VDDQ = 1.2V Typical

VPP = 2.5V Typical

VDDSPD = 2.2V to 3.6V

Nominal and dynamic on-die termination (ODT) for data- strobe- and mask signals

Low-power auto self refresh (LPASR)

Data bus inversion (DBI) for data bus

On-die VREFDQ generation and calibration

Single-rank

On-board I2 serial presence-detect (SPD) EEPROM

8 internal banks; 2 groups of 4 banks each

Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)

Selectable BC4 or BL8 on-the-fly (OTF)

Fly-by topology

Terminated control command and address bus

PCB: Height 1.18” (30.00mm)

RoHS Compliant and Halogen-Free

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